Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes Citation
نویسندگان
چکیده
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes," Opt. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.
منابع مشابه
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.
We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Gamma valley. Room-temperature EL ...
متن کاملHigh active carrier concentration in n-type, thin film Ge using delta-doping
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10cm, and uniform activated dopant concentrations above 4 × 10cm in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of p...
متن کاملRoom temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.
We report the room temperature electroluminescence (EL) at 1.6 microm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal ...
متن کاملStudy of GeSn based heterostructures: towards optimized group IV MQW LEDs.
We present results on CVD growth and electro-optical characterization of Ge(0.92)Sn(0.08)/Ge p-i-n heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn active layers in different LED geometries, such as double heterostructures and multi quantum wells is discussed based on electroluminescence data. Theoretical calculations by effective mass and 6 band k∙p method reve...
متن کاملDirect-gap optical gain of Ge on Si at room temperature.
Lasers on Si are crucial components of monolithic electronic-photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to achieve efficient light emission and optical gain from its direct gap transition. We report on w...
متن کامل